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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW DESCRIPTION *High Power Gain *High Current Gain Bandwidth Product *Low Noise Figure APPLICATIONS *Designed for use in RF amplifiers ,mixers and oscillators with signal frequencies up to 1 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 35 mA PC Collector Power Dissipation @TC=25 0.3 W TJ Junction Temperature 175 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BFR93AW TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 5V; IE= 0 0.05 A hFE DC Current Gain IC= 30mA ; VCE= 5V 40 fT Current-Gain--Bandwidth Product IC= 30mA ; VCE= 5V; f= 500MHz 4 5 GHz COB Output Capacitance IE= 0 ; VCB= 5V; f= 1MHz 0.7 pF Cre Feedback Frequency IE= 0 ; VCB= 5V; f= 1MHz 0.6 pF NF Noise Figure IC= 5mA ; VCE= 8V; f= 1GHz 1.5 dB NF Noise Figure IC= 5mA ; VCE= 8V; f= 2GHz 2.1 dB isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Websitewww.iscsemi.cn 4 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Websitewww.iscsemi.cn 6 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR93AW isc Websitewww.iscsemi.cn |
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